rev. g 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 1 of 1 www. sem icoa .com 2n3810l silicon pnp transisto r data sheet description sem i coa sem i conductors offers: ? screening and processing per mil-prf-19500 appendi x e ? jan level (2n3810lj) ? jantx level (2N3810LJX) ? jantxv level (2n3810ljv) ? jans level (2n3810ljs) ? qci to the applicable level ? 100% die visual inspection per mil-std-750 m e thod 2072 for jantxv and jans ? radiation testing (total dose) upon request please contact sem i coa for speci al confi gurat i ons www. semicoa .com or (714) 979-1900 applications ? general purpose ? m a t c hed dual t r ansi st ors ? pnp silico n tran sisto r features ? herm etically sealed to-78 m e tal can ? al so avai l a bl e i n chi p confi gurat i on ? c h i p geom et ry 0220 ? r e ference docum ent : m i l-pr f-19500/ 336 benefits ? qu alificatio n lev e ls: jan, jantx, jantxv and jans ? r a di at i on t e st i ng avai l a bl e absolute maximum ratings t c = 2 5 c u n l ess o t h e rw ise sp ecified parameter sy mbol rating unit co llecto r-em itter vo ltag e v ceo 60 vo lts collector-base voltage v cbo 60 vo lts em itter-base vo ltag e v ebo 5 vo lts c o l l ect or c u rrent , c ont i nuous i c 50 ma power di ssi pat i on, t a = 25 c derat e l i n earl y above 25 c p t 300 one sect i on 600 bot h sect i ons 1.71one sect i on 3.43 bot h sect i ons mw mw / c operat i ng junct i on tem p erat ure t j -65 t o +200 c storage tem p erature t stg -65 t o +200 c semicoa corporation copy right ? 20 10
rev. g 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 2 of 2 www. sem icoa .com 2n3810l silicon pnp transisto r data sheet electrical characteristics characteristics specified at t a = 2 5 c off characteristics parameter sy mbol test conditions min ty p max units collector-em itter breakdown voltage v (br)ceo i c = 100 a 60 vo lts collector-base cutoff current i cbo1 i cbo2 i cbo3 v cb = 60 vol t s v cb = 50 vol t s v cb = 50 vol t s , t a = 150 c 10 10 10 a na a em itter-base cu to ff cu rren t i ebo1 i ebo2 v eb = 5 vo lts v eb = 4 vo lts 10 10 a na on characteristics pulse test: pulse width = 300 s, duty cy cle 2.0% parameter sy mbol test conditions min ty p max units dc current gain h fe2 h fe3 h fe4 h fe5 h fe6 h fe3-1 /h fe3-2 i c = 10 a, v ce = 5 vo lts i c = 100 a, v ce = 5 vo lts i c = 1 m a , v ce = 5 vo lts i c = 10 m a , v ce = 5 vo lts i c = 100 a, v ce = 5 vo lts t a = -55 c i c = 100 a, v ce = 5 vo lts 100 150 150 125 60 0.9 450 450 1.0 base-em itter vo ltag e v be |v be1 -v be2 | 1 |v be1 -v be2 | 2 |v be1 -v be2 | 3 v ce = 5 vo lts, i c = 100 a v ce = 5 vo lts, i c = 10 a v ce = 5 vo lts, i c = 100 a v ce = 5 vo lts, i c = 10 m a 0.7 5 3 5 vo lts m v o lts m v o lts m v o lts base-em itter satu ratio n vo ltag e v besat1 v besat2 i c = 100 a, i b = 10 a i c = 1 m a , i b = 100 a 0.7 0.8 vo lts co llecto r-em itter satu ratio n vo ltag e v cesat1 v cesat2 i c = 100 a, i b = 10 a i c = 1 m a , i b = 100 a 0.20 0.25 vo lts semicoa corporation copy right ? 20 10
www. sem icoa .com 2n3810l silicon pnp transisto r data sheet dy namic characteristics parameter sy mbol test conditions min ty p max units mag n itu d e ? co m m o n em itter, sh o r t circuit forward curre nt transfer ratio |h fe1 | |h fe2 | v ce = 5 vo lts, i c = 500 a, f = 30 m h z v ce = 5 vo lts, i c = 1 m a , f = 100 m h z 1 1 5 sm all sig n a l sh o r t circu it fo rward current transfer ratio h fe v ce = 10 vol t s , i c = 1 m a , f = 1 khz 150 600 op en circu it ou tp u t cap acitan ce c obo v cb = 5 vo lts, i e = 0 m a , 100 khz < f < 1 m h z 5 pf open c i rcui t input c a paci t a nce c ibo v eb = 0.5 vol t s , i c = 0 m a , 100 khz < f < 1 m h z 8 pf noise figure nf 1 nf 2 nf 3 v ce = 10 vol t s , i c = 100 a, r g = 3 k ? f = 100 hz f = 1 khz f = 10 khz 7 3 2.5 db noise figure (wideband) nf v ce = 10 vol t s , i c = 100 a, r g = 3 k ? 10 hz < f < 15.7 khz 3.5 db short c i rcui t input im pedance h ie v cb =10v, i c =1m a , f =1khz 3 30 k ? op en circu it ou tp u t ad m ittan ce h oe v cb =10v, i c =1m a , f =1khz 5 60 ? open circuit reverse voltage transfer ratio h re v cb =10v, i c =100 a, f=1khz 25x10 -4 rev. g 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 3 of 3 semicoa corporation copy right ? 20 10
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